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CM1213-02ST

1, 2, 4, 6 and 8-channel low capacitance esd protection arrays

器件类别:分立半导体    二极管   

厂商名称:California Micro Devices

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
California Micro Devices
零件包装代码
SOT-23
包装说明
R-PDSO-G5
针数
178
Reach Compliance Code
unknown
ECCN代码
EAR99
外壳连接
ANODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
MO-178AA
JESD-30 代码
R-PDSO-G5
元件数量
1
端子数量
5
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
0.225 W
认证状态
Not Qualified
表面贴装
YES
技术
AVALANCHE
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
CM1213
1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays
Features
1, 2, 4, 6 and 8 channels of ESD protection
Provides ESD protection to IEC61000-4-2 Level 4
- 8kV contact discharge
- 15kV air discharge
Low channel input capacitance of 1.0pF typical
Minimal capacitance change with temperature and
voltage
Channel input capacitance matching of 0.02pF typ-
ical is ideal for differential signals
Mutual capacitance between signal pin and adja-
cent signal pin - 0.11pF typical
Zener diode protects supply rail and eliminates the
need for external by-pass capacitors
Each I/O pin can withstand over 1000 ESD strikes
Available in SOT, SOIC and MSOP packages
Lead-free version available
Product Description
The CM1213 family of diode arrays has been designed
to provide ESD protection for electronic components or
sub-systems requiring minimal capacitive loading.
These devices are ideal for protecting systems with
high data and clock rates or for circuits requiring low
capacitive loading. Each ESD channel consists of a
pair of diodes in series which steer the positive or neg-
ative ESD current pulse to either the positive (V
P
) or
negative (V
N
) supply rail. A Zener diode is embedded
between V
P
and V
N
, offering two advantages. First, it
protects the V
CC
rail against ESD strikes, and second,
it eliminates the need for a bypass capacitor that would
otherwise be needed for absorbing positive ESD
strikes to ground. The CM1213 will protect against
ESD pulses up to
±8kV
per the IEC 61000-4-2 stan-
dard and using the MIL-STD-883D (Method 3015)
specification for Human Body Model (HBM) ESD, all
pins are protected from contact discharges of greater
than
±15kV.
These devices are particularly well-suited for protecting
systems using high-speed ports such as USB2.0,
IEEE1394 (Firewire
®
, iLink
), Serial ATA, DVI, HDMI
and corresponding ports in removable storage, digital
camcorders, DVD-RW drives and other applications
where extremely low loading capacitance with ESD
protection are required in a small package footprint.
The CM1213 family of devices is available with
optional lead-free finishing.
Applications
USB2.0 ports at 480Mbps in desktop PCs, note-
books and peripherals
IEEE1394 Firewire
®
ports at 400Mbps / 800Mbps
DVI ports, HDMI ports in notebooks, set top boxes,
digital TVs, LCD displays
Serial ATA ports in desktop PCs and hard disk
drives
PCI Express ports
General purpose high-speed data line ESD
protection
Electrical Schematics
V
P
V
P
CH4
V
P
CH3
N.C.
N.C.
V
P
N.C.
N.C.
CH1
CH1
CH2
V
N
CM1213-01ST/SO
CH6
V
N
CM1213-02ST/SO
CM1213-02SS/SR
V
P
CH5
CH4
CH1
V
N
CH2
CH1
CH2
V
N
CH3
CH4
CM1213-04ST/SO
CM1213-04MS/MR
CH8
CH7
V
P
CM1213-A4MR
CH6
CH5
CH1
CH2
V
N
CH3
CH1
CH2
V
N
CH3
CH4
CM1213-06MS/MR
CM1213-06SN/SM
CM1213-08MS/MR
© 2006 California Micro Devices Corp. All rights reserved.
03/02/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.cmd.com
1
CM1213
PACKAGE / PINOUT DIAGRAMS
Top View
CH1
1
V
N
Top View
1
4
Top View
V
P
NC
V
N
CH2
CH1
1
2
3
5
Top View
V
P
CH1
V
N
CH2
CH2
1
2
3
6
CH4
V
P
CH3
Top View
CH1
CH2
V
N
1
8
CH6
V
P
D121 /
D131
V
P
2
D123 /
D133
D124 /
D134
D122 /
D132
D126 /
D136
3
V
N
CH1
2
5
4
2
3
4
7
6
5
CH5
CH4
3
4
CH3
3-Lead SOT23-3
4-Lead SOT143-4
5-Lead SOT23-5
6-Lead SOT23-6
8-Lead SOIC-8
Top View
Top View
CH1
CH2
V
N
Top View
NC
CH4
V
N
Top View
NC
NC
V
P
CH1
CH6
V
P
1
2
3
4
5
10
9
8
7
6
CH1
CH2
V
N
1
2
3
4
5
10
9
8
7
6
CH1
CH2
CH3
CH4
V
N
1
2
3
4
5
10
9
8
7
6
CH8
CH7
V
P
1
8
NC
V
P
S134
D124 /
D134
D128 /
D138
D127 /
D137
2
3
4
7
6
5
CH5
CH4
CH2
NC
NC
CH3
CH3
CH4
NC
NC
CH6
CH5
CH3
8-Lead MSOP-8
10-Lead MSOP-10
10-Lead MSOP-10
10-Lead MSOP-10
Note: These drawings are not to scale.
Pin Discriptions
PIN
1
2
3
1-CHANNEL, 3-LEAD SOT23-3 PACKAGES
NAME
TYPE
DESCRIPTION
CH1
I/O
ESD Channel
V
P
PWR
Positive voltage supply rail
V
N
GND
Negative voltage supply rail
4-CHANNEL, 6-LEAD SOT23-6 PACKAGE
TYPE
DESCRIPTION
I/O
ESD Channel
GND
Negative voltage supply rail
CH2
I/O
ESD Channel
CH3
I/O
ESD Channel
V
P
PWR
Positive voltage supply rail
CH4
I/O
ESD Channel
PIN
1
2
3
4
2-CHANNEL, 4-LEAD SOT143-4 PACKAGE
NAME
TYPE
DESCRIPTION
V
N
GND
Negative voltage supply rail
CH1
I/O
ESD Channel
CH2
I/O
ESD Channel
V
P
PWR
Positive voltage supply rail
2-CHANNEL, 5-LEAD SOT23-5 PACKAGE
NAME
TYPE
DESCRIPTION
NC
V
N
CH1
CH2
V
P
GND
I/O
I/O
PWR
No Connect
Negative voltage supply rail
ESD Channel
ESD Channel
Positive voltage supply rail
PIN
1
2
3
4
5
6
NAME
CH1
V
N
PIN
1
2
3
4
5
PIN
1
2
3
4
5
6
7
8
4-CHANNEL, 10-LEAD MSOP-10 PACKAGE (CM1213-04MS/MR)
PIN
NAME
TYPE
DESCRIPTION
1
CH1
I/O
ESD Channel
2
NC
No Connect
V
P
3
PWR
Positive voltage supply rail
4
CH2
I/O
ESD Channel
5
NC
No Connect
6
CH3
I/O
ESD Channel
7
NC
No Connect
V
N
8
GND
Negative voltage supply rail
9
CH4
I/O
ESD Channel
10
NC
No Connect
PIN
1
2
3
4
5
6
7
8
9
10
4-CHANNEL, 10-LEAD MSOP-10 PACKAGE (CM1213-A4MR)
NAME
TYPE
DESCRIPTION
CH1
I/O
ESD Channel
CH2
I/O
ESD Channel
V
N
GND
Negative voltage supply rail
CH3
I/O
ESD Channel
CH4
I/O
ESD Channel
NC
No Connect
NC
No Connect
V
P
PWR
Positive voltage supply rail
NC
No Connect
NC
No Connect
6-CHANNEL, 8-LEAD MSOP-8/SOIC-8 PACKAGE
NAME
TYPE
DESCRIPTION
CH1
I/O
ESD Channel
CH2
I/O
ESD Channel
V
N
GND
Negative voltage supply rail
CH3
I/O
ESD Channel
CH4
I/O
ESD Channel
CH5
I/O
ESD Channel
V
P
PWR
Positive voltage supply rail
CH6
I/O
ESD Channel
8-CHANNEL, 10-LEAD MSOP-10 PACKAGE (CM1213-08MS/MR)
PIN
NAME
TYPE
DESCRIPTION
1
CH1
I/O
ESD Channel
2
CH2
I/O
ESD Channel
3
CH3
I/O
ESD Channel
4
CH4
I/O
ESD Channel
V
N
5
GND
Negative voltage supply rail
6
CH5
I/O
ESD Channel
7
CH6
I/O
ESD Channel
V
P
PWR
Positive voltage supply rail
8
9
CH7
I/O
ESD Channel
10
CH8
I/O
ESD Channel
© 2006 California Micro Devices Corp. All rights reserved.
2
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.cmd.com
03/02/06
CM1213
Ordering Information
PART NUMBERING INFORMATION
Standard Finish
# of Channels
1
2
2
4
4
4
6
6
8
Leads
3
4
5
6
10
10
8
8
10
Package
SOT23-3
SOT143-4
SOT23-5
SOT23-6
MSOP-10
MSOP-10
SOIC-8
MSOP-8
MSOP-10
Ordering Part
Number
1
CM1213-01ST
CM1213-02SS
CM1213-02ST
CM1213-04ST
CM1213-04MS
CM1213-06SN
CM1213-06MS
CM1213-08MS
Part Marking
D121
D122
D123
D124
D124
D126
D127
D128
Lead-free Finish
Ordering Part
Number
1
CM1213-01SO
CM1213-02SR
CM1213-02SO
CM1213-04SO
CM1213-04MR
CM1213-A4MR
CM1213-06SM
CM1213-06MR
CM1213-08MR
Part Marking
D131
D132
D133
D134
D134
S134
D136
D137
D138
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Operating Supply Voltage (V
P
- V
N
)
Operating Temperature Range
Storage Temperature Range
DC Voltage at any channel input
RATING
6.0
-40 to +85
-65 to +150
(V
N
- 0.5) to (V
P
+ 0.5)
UNITS
V
°C
°C
V
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
Package Power Rating
SOT23-3 Package (CM1213-01ST/SO)
SOT143-4 Package (CM1213-02SS/SR)
SOT23-5 Package (CM1213-02ST/SO)
SOT23-6 Package (CM1213-04ST/SO)
MSOP-8 Package (CM1213-06MS/MR)
MSOP-10 Package (CM1213-08MS/MR, CM1213-04MS/MR, CM1213-A4MR)
SOIC-8 Package (CM1213-06SN/SM)
RATING
-40 to +85
225
225
225
225
400
400
600
UNITS
°C
mW
mW
mW
mW
mW
mW
mW
© 2006 California Micro Devices Corp. All rights reserved.
03/02/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.cmd.com
3
CM1213
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL PARAMETER
V
P
I
P
V
F
Operating Supply Voltage (V
P
-V
N
)
Operating Supply Current
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
Channel Input Capacitance
Channel Input Capacitance
Matching
Mutual Capacitance between sig-
nal pin and adjacent signal pin
ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per
IEC 61000-4-2 standard
b) Human Body Model,
MIL-STD-883, Method
3015
Channel Clamp Voltage
Positive Transients
Negative Transients
Dynamic Resistance
Positive Transients
Negative Transients
(V
P
-V
N
)=3.3V
I
F
= 8mA; T
A
=25°C
0.60
0.60
0.80
0.80
±0.1
1.0
0.02
0.11
CONDITIONS
MIN
TYP
3.3
MAX
5.5
8.0
0.95
0.95
±1.0
1.5
UNITS
V
μA
V
V
μA
pF
pF
pF
I
LEAK
C
IN
T
A
=25°C; V
P
=5V, V
N
=0V
At 1 MHz, V
P
=3.3V, V
N
=0V, V
IN
=1.65V;
Note 2 applies
At 1 MHz, V
P
=3.3V, V
N
=0V, V
IN
=1.65V;
Note 2 applies
At 1 MHz, V
P
=3.3V, V
N
=0V, V
IN
=1.65V;
Note 2 applies
Δ
C
IN
C
MUTUAL
V
ESD
Notes 2, 4 & 5; T
A
=25°C
Notes 2, 3 & 5; T
A
=25°C
±8
±15
kV
kV
V
CL
T
A
=25°C, I
PP
= 1A, t
P
= 8/20uS;
Notes 2, & 5
I
PP
= 1A, t
P
= 8/20uS
Any I/O pin to Ground; Note 2 and 5
+8.8
-1.4
0.7
0.4
V
V
Ω
Ω
R
DYN
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
All parameters specified at T
A
= -40°C to +85°C unless otherwise noted.
These parameters guaranteed by design and characterization.
Human Body Model per MIL-STD-883, Method 3015, C
Discharge
= 100pF, R
Discharge
= 1.5KΩ, V
P
= 3.3V, V
N
grounded.
Standard IEC 61000-4-2 with C
Discharge
= 150pF, R
Discharge
= 330Ω, V
P
= 3.3V, V
N
grounded.
These measurements performed with no external capacitor on V
P
(V
P
floating).
© 2006 California Micro Devices Corp. All rights reserved.
4
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.cmd.com
03/02/06
CM1213
Performance Information
Input Channel Capacitance Performance Curves
2
Input Capacitance (pF)
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
Input Voltage (V)
Typical Variation of C
IN
vs. V
IN
(f=1MHz, VP = 3.3V, VN = 0V, 0.1
μF
chip capacitor between VP and VN,
25°C
)
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50
-25
0
25
Input Capacitance (pF)
0V DC Input Bias
1.65V DC Input Bias
50
75
100
Temperature (°C)
Typical Variation of C
IN
vs. Temp
(f=1MHz, V
IN
=30mV, VP = 3.3V, VN = 0V,
0.1
μF
chip capacitor between VP and VN)
© 2006 California Micro Devices Corp. All rights reserved.
03/02/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.cmd.com
5
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